STTH3003CW october 1999 - ed: 5a high frequency secondary rectifier ? dual center tap fast recovery epitaxial diodes suited for switch mode power supply and high frequency dc to dc converters. packaged in to-247 this device is intended for secondary rectification. description combines highest recovery and reverse voltage performance ultra-fast, soft and noise-free recovery features and benefits symbol parameter value unit v rrm repetitive peak reverse voltage 300 v i f(rms) rms forward current 30 a i f(av) average forward current tc = 135 c d = 0.5 per diode per device 15 30 a i fsm surge non repetitive forward current tp = 10 ms sinusoidal 140 a i rsm non repetitive peak reverse current tp = 20 m s square 7a t stg storage temperature range -65 +175 c tj maximum operating junction temperature +175 c absolute ratings (limiting values, per diode) i f(av) 2 x 15 a v rrm 300 v tj (max) 175 c v f (max) 1 v trr (max) 40 ns major product characteristics a1 k a2 to-247 1/5
symbol parameter tests conditions min. typ. max. unit i r * reverse leakage current v r = 300 v tj = 25 c 40 m a tj = 125 c 40 400 v f ** forward voltage drop i f = 15 a tj = 25 c 1.25 v tj = 125 c 0.85 1 pulse test : * tp = 5 ms, d < 2 % ** tp = 380 m s, d < 2% to evaluate the maximum conduction losses use the following equation : p = 0.75 x i f(av) + 0.017 i f 2 (rms) static electrical characteristics (per diode) symbol parameter value unit r th (j-c) junction to case per diode 2.0 c/w total 1.05 r th (c) coupling 0.1 thermal resistances symbol tests conditions min. typ. max. unit trr i f = 0.5 a irr = 0.25 a i r = 1a tj = 25 c 30 ns i f = 1 a di f /dt = - 50 a/ m s v r = 30v 40 tfr i f = 15 a di f /dt = 100 a/ m s v fr = 1.1 x vf max. tj = 25 c 300 ns v fp 3.5 v s factor vcc = 200 v i f = 15 a di f /dt = 200a/ m s tj = 125 c 0.3 - i rm 8.5 a recovery characteristics STTH3003CW 2/5
02468101214161820 0 2 4 6 8 10 12 14 16 18 20 if(av) (a) p1(w) t d =tp/t tp d = 1 d = 0.5 d = 0.2 d = 0.1 d = 0.05 fig. 1: conduction losses versus average current (per diode). 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 1 10 100 200 vfm(v) ifm(a) tj=125c tj=25c tj=75c fig. 2: forward voltage drop versus forward current (maximum values , per diode) . 1e-3 1e-2 1e-1 1e+0 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) zth(j-c)/rth(j-c) single pulse d = 0.1 d = 0.2 d = 0.5 t d =tp/t tp fig. 3: relative variation of thermal impedance junction to case versus pulse duration. 0 50 100 150 200 250 300 350 400 450 500 0 20 40 60 80 100 trr(ns) vr=200v tj=125c if=2*if(av) if=if(av) if=0.5*if(av) dif/dt(a/s) fig. 5: reverse recovery time versus di f /dt (90% confidence, per diode). 0 50 100 150 200 250 300 350 400 450 500 0 2 4 6 8 10 12 14 16 dif/dt(a/s) irm(a) vr=200v tj=125c if=2*if(av) if=if(av) if=0.5*if(av) fig. 4: peak reverse recovery current versus di f /dt (90% confidence, per diode). 0 50 100 150 200 250 300 350 400 450 500 0.00 0.10 0.20 0.30 0.40 0.50 0.60 s factor vr=200v tj=125c dif/dt(a/s) fig. 6: softness factor versus di f /dt (typical values, per diode). STTH3003CW 3/5
25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 tj(c) irm s factor fig. 7: relative variation of dynamic parameters versus junction temperature (reference: tj = 125c). 0 50 100 150 200 250 300 350 400 450 500 0 1 2 3 4 5 6 7 8 vfp(v) if=if(av) tj=125c dif/dt(a/s) fig. 8: transient peak forward voltage versus di f /dt (90% confidence, per diode). 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500 tfr(ns) vfr=1.1*vf max. if=if(av) tj=125c dif/dt(a/s) fig. 9: forward recovery time versus di f /dt (90% confidence, per diode). STTH3003CW 4/5
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without expres s written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1999 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com package mechanical data to-247 f2 f1 v2 l4 l2 l1 l3 d l l5 me h v v a dia. f3 f4 g = = f(x3) ref. dimensions millimeters inches min. typ. max. min. typ. max. a 4.85 5.15 0.191 0.203 d 2.20 2.60 0.086 0.102 e 0.40 0.80 0.015 0.031 f 1.00 1.40 0.039 0.055 f1 3.00 0.118 f2 2.00 0.078 f3 2.00 2.40 0.078 0.094 f4 3.00 3.40 0.118 0.133 g 10.90 0.429 h 15.45 15.75 0.608 0.620 l 19.85 20.15 0.781 0.793 l1 3.70 4.30 0.145 0.169 l2 18.50 0.728 l3 14.20 14.80 0.559 0.582 l4 34.60 1.362 l5 5.50 0.216 m 2.00 3.00 0.078 0.118 v5 5 v2 60 60 dia. 3.55 3.65 0.139 0.143 ordering code marking package weight base qty delivery mode STTH3003CW STTH3003CW to-247 4.36g 30 tube cooling method: by conduction (c) recommended torque value: 0.8 n.m. maximum torque value: 1.0 n.m. epoxy meets ul 94,v0 STTH3003CW 5/5
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